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| Preliminary SIM150D06AV1 VCES = 600V Ic=150A VCE(ON) typ. = 1.5V @Ic=150A "HALF-BRIDGE" IGBT MODULE Feature design technology Low VCE (sat) Low Turn-off losses Short tail current for over 20KHz Applications Motor controls VVVF inverters Inverter-type welding MC over 18KHZ SMPS, Electrolysis UPS/EPS, Robotics Package : V1 Absolute Maximum Ratings @ Tj=25 Symbol VCES VGES IC ICP IF IFM tp Viso Tj Tstg Weight Md Td (Per Leg) Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Mounting torque with screw : M5 Terminal connection torque : M5 TC = 80 TC = TC = 80 TC = TC = 150 TC = Condition Ratings 600 20 150 (210) 300 150 (210) 300 6 (8) 2500 -40 ~ 150 -40 ~ 125 190 2.0 2.0 Unit V V A A A A AC @ 1 minute V g N.m N.m Static Characteristics @ Tj = 25 Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Forward voltage drop Integrated gate resistor (unless otherwise specified) Min Typ 1.50 5.8 Max 1.95 Unit V Test conditions IC = 150A, VGE = 15V VCE = VGE, IC = 4 VGE = 0V, VCE = 600V VCE = 0V, VGE = V 6.5 5.0 400 1.6 2 1.9 V IF = 150A Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 Parameters Ciss Coss Crss td(on) tr td(off) tf VBR IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Cathode-Anode breakdown Voltage Maximum Reverse Leakage Current Reverse Recovery Time Reverse Recovery Charge 130 6.9 600 SIM150D06AV1 (unless otherwise specified) Unit Test conditions VCE = 25V, VGE = V Min Typ 9200 580 270 125 30 Max pF f = 1 MHz Inductive Switching (125 VCC = 300V ns IC = 150A, VGE = RG = 3.3 V 250 VR = 600V IF = 150A, VR = 300V di / dt = 2100A / 15V 340 60 650 Thermal Characteristics Symbol RJC RJC RCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.05 Max 0.44 0.77 - Unit /W Fig 1. Typ. IGBT Output Characteristics Fig 2. Typ. IGBT Out Characteristics Preliminary SIM150D06AV1 Fig 3. Typ. Transfer Characteristics Fig 4. Reverse Bias Operating Area Fig 5. Forward Characteristics of Diode Fig 6. Operating Frequency vs Collector Current Preliminary Package Outline (dimensions in mm) SIM150D06AV1 JUNE 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com |
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